Flash memory including improved transistor cells and a method of

Details Flash memory including improved transistor cells and a method of Flash memory including improved transistor cells and a method of

1996-12-12

1998-07-28

Dinh, Son T.

Static information storage and retrieval

Floating gate

Particular biasing

36518501, 36518524, G11C 1602

Patent

active

057870365

ABSTRACT:
A flash memory includes a plurality of MOSFETs. Each of the MOSFETs comprises a first conductive type substrate, a source, and a drain. The source and the drain are formed on one major surface of the substrate. A floating gate is situated over the major surface via a first insulation layer in a manner to control a current flowing through a channel between the source and the drain. The floating gate is highly resistive so as to essentially hold electrons in the region into which they were are injected from a depletion layer formed in the channel. A control gate is further provided over the floating gate via a second insulation layer.

REFERENCES:
patent: 5416738 (1995-05-01), Shrivastava
patent: 5491657 (1996-02-01), Haddad et al.
patent: 5511021 (1996-04-01), Bergemont et al.
patent: 5526315 (1996-06-01), Kaya et al.

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