Flash memory having memory section and peripheral circuit...

Details Flash memory having memory section and peripheral circuit... Flash memory having memory section and peripheral circuit...

2005-12-20

2005-12-20

Tran, Thien F. (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S317000, C257S319000, C257S320000, C257S321000

Reexamination Certificate

active

06977409

ABSTRACT:
A semiconductor memory device includes a semiconductor substrate, an element isolation region formed in the semiconductor substrate and including a thick element isolating insulation film, for isolating an element region, a first gate electrode provided on the element region in the semiconductor substrate in self-alignment with the element isolation region, a second gate electrode provided on the first gate electrode with an insulation film interposed therebetween, and a resistance element formed on the element isolation region, the resistance element and the second gate electrode being formed of the same conductive film.

REFERENCES:
patent: 4897815 (1990-01-01), Tanaka et al.
patent: 6011293 (2000-01-01), Yuzuriha et al.
patent: 6228713 (2001-05-01), Pradeep et al.
patent: 6228714 (2001-05-01), Choi
patent: 6265739 (2001-07-01), Yaegashi et al.
patent: 6340611 (2002-01-01), Shimizu et al.
patent: 11-26731 (1999-01-01), None

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