Flash memory having memory section and peripheral circuit...

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode

Reexamination Certificate

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Details

C257S317000, C257S319000, C257S320000, C257S321000

Reexamination Certificate

active

06977409

ABSTRACT:
A semiconductor memory device includes a semiconductor substrate, an element isolation region formed in the semiconductor substrate and including a thick element isolating insulation film, for isolating an element region, a first gate electrode provided on the element region in the semiconductor substrate in self-alignment with the element isolation region, a second gate electrode provided on the first gate electrode with an insulation film interposed therebetween, and a resistance element formed on the element isolation region, the resistance element and the second gate electrode being formed of the same conductive film.

REFERENCES:
patent: 4897815 (1990-01-01), Tanaka et al.
patent: 6011293 (2000-01-01), Yuzuriha et al.
patent: 6228713 (2001-05-01), Pradeep et al.
patent: 6228714 (2001-05-01), Choi
patent: 6265739 (2001-07-01), Yaegashi et al.
patent: 6340611 (2002-01-01), Shimizu et al.
patent: 11-26731 (1999-01-01), None

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