Flash memory having inclined channel

Details Flash memory having inclined channel Flash memory having inclined channel

1994-10-24

1996-03-26

Limanek, Robert P.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257317, 257321, H01L 29788

Patent

active

055023215

ABSTRACT:
A electrically erasable and programmable memory comprising: a semiconductor substrate; a source region and a drain region formed spaced apart from each other by a definite distance on a main surface of said semiconductor substrate; a channel region provided between the source region and the drain region; a gate insulating film provided on the channel region; a floating gate electrode provided on the gate insulating film; and a control gate electrode provided with an interlayer insulating film sandwiched therebetween so that the control gate electrode at least partially laminates the floating gate electrode; the channel region and the main surface having an inclined portion and the source region being provided relatively above or below the drain region.

REFERENCES:
patent: 4222062 (1980-09-01), Trotter et al.
patent: 4622737 (1986-11-01), Ravaglia
patent: 4796228 (1989-01-01), Baglee
patent: 4812885 (1989-03-01), Riemenschneider
patent: 4963825 (1990-10-01), Mielke
patent: 4964080 (1990-10-01), Tzeng
patent: 4990979 (1991-02-01), Otto
patent: 5049515 (1991-09-01), Tzeng
patent: 5341342 (1994-08-01), Brahmbhatt

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