Static information storage and retrieval – Floating gate – Particular biasing
Reexamination Certificate
2007-03-06
2007-03-06
Auduong, Gene N. (Department: 2827)
Static information storage and retrieval
Floating gate
Particular biasing
C365S185050, C365S185330
Reexamination Certificate
active
11201620
ABSTRACT:
Systems and methods are disclosed herein to provide improved verification of flash memory erasure. For example, in accordance with an embodiment of the present invention, an integrated circuit includes an array of flash memory cells. A plurality of sense amplifiers are also provided wherein each sense amplifier is associated with a plurality of the flash memory cells and adapted to detect a state of one of the associated flash memory cells selected from the plurality of flash memory cells. A first logic circuit is also provided to receive the states of the selected flash memory cells from the sense amplifiers and perform a first logic operation at approximately the same time on the states to verify that all states of the selected flash memory cells correspond to an erased state.
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MICRON, Flash Memory, 4Mb Smart 3 Boot Block Flash Memory, Rev. 2, Pub. Mar. 1, 2001, Micron Technology, Inc., pp. 1-30.
Fontana Fabiano
Wong Hok
Auduong Gene N.
Lattice Semiconductor Corporation
MacPherson Kwok & Chen & Heid LLP
Michelson Greg J.
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