Static information storage and retrieval – Floating gate – Particular biasing
Reexamination Certificate
2011-07-26
2011-07-26
Dinh, Son T (Department: 2824)
Static information storage and retrieval
Floating gate
Particular biasing
C365S185280
Reexamination Certificate
active
07986560
ABSTRACT:
Disclosed is a method of verifying a programmed condition of a flash memory device, being comprised of: determining a level of an additional verifying voltage in response to the number of programming/erasing cycles of memory cells; conducting a verifying operation to programmed memory cells with an initial verifying voltage lower than the additional verifying voltage; and selectively conducting an additional verifying operation with the additional verifying voltage to the program-verified memory cells in response to the number of programming/erasing cycles.
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Kim Ki-nam
Kim Yong-Seok
Lee Yeong-Taek
Park Ki-Tae
Dinh Son T
Myers Bigel & Sibley & Sajovec
Samsung Electronics Co,. Ltd.
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