Static information storage and retrieval – Read/write circuit – Signals
Reexamination Certificate
2005-12-13
2005-12-13
Phung, Anh (Department: 2824)
Static information storage and retrieval
Read/write circuit
Signals
C365S189050, C365S189070, C365S189120
Reexamination Certificate
active
06975547
ABSTRACT:
Flash memory devices include at least one flash memory array and an address compare circuit that is configured to indicate whether an applied row address associated with a first operation (e.g., program, erase) is within or without an unlock area of the at least one flash memory array. A control circuit is also provided. This control circuit is configured to block performance of the first operation on the flash memory array in response to detecting an indication from the address compare circuit that the applied row address is outside the unlock area of the flash memory array.
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Office Action, Korean Application No. 10-2003-0053754, Aug. 24, 2004.
Notice to Submit Response, Korean Application No. 10-2003-0039127, Jun. 23, 2005.
Byeon Dae Seok
Lee Seung-Jae
Luu Pho M.
Myers Bigel & Sibley Sajovec, PA
Phung Anh
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