Static information storage and retrieval – Floating gate – Particular connection
Reexamination Certificate
2008-06-11
2010-11-30
Luu, Pho M (Department: 2824)
Static information storage and retrieval
Floating gate
Particular connection
C365S185180, C365S185250
Reexamination Certificate
active
07843733
ABSTRACT:
Flash memory devices are provided including a plurality of layers stacked vertically. Each of the plurality of layers include a plurality of memory cells. A row decoder is electrically coupled to the plurality of layers and configured to supply a wordline voltage to the plurality of layers. Memory cells provided in at least two layers of the plurality of layers belong to a same memory block and wordlines associated with the memory cells in the at least two layers of the plurality of layers are electrically coupled.
REFERENCES:
patent: 5991224 (1999-11-01), Aipperspach et al.
patent: 6028788 (2000-02-01), Choi et al.
patent: 6317353 (2001-11-01), Ikeda et al.
patent: 7170786 (2007-01-01), Chien et al.
patent: 7551490 (2009-06-01), Kim
patent: 7596026 (2009-09-01), Kwon et al.
patent: 2005/0162927 (2005-07-01), Chien et al.
patent: 06-053517 (1994-02-01), None
patent: 2002-093184 (2002-03-01), None
patent: 2005-209271 (2005-08-01), None
Non-Final Rejection, Korean Application No. 10-2007-0057517, Aug. 26, 2008.
Kim Doo-gon
Lee Yeong-taek
Park Ki-tae
Luu Pho M
Myers Bigel & Sibley & Sajovec
Samsung Electronics Co,. Ltd.
LandOfFree
Flash memory devices having three dimensional stack... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Flash memory devices having three dimensional stack..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Flash memory devices having three dimensional stack... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4175052