Flash memory device with split string selection line structure

Static information storage and retrieval – Floating gate – Particular connection

Reexamination Certificate

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Details

C365S185180, C365S185190, C365S185230

Reexamination Certificate

active

07817473

ABSTRACT:
A flash memory device is disclosed and includes a memory cell array including a plurality of sectors. Each one of the plurality of sectors includes a plurality of strings, and each of the plurality of strings includes a plurality of memory cells series connected between a string select transistor and a ground select transistor. The flash memory device also includes a plurality of string selection lines, wherein each one of the plurality of string selection lines is respectively connected to string select transistors associated the plurality of strings in one of the plurality of sectors.

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