Static information storage and retrieval – Floating gate – Particular biasing
Reexamination Certificate
2008-07-29
2008-07-29
Hoang, Huan (Department: 2827)
Static information storage and retrieval
Floating gate
Particular biasing
C365S185030, C365S185180, C365S189090
Reexamination Certificate
active
11474430
ABSTRACT:
A flash memory device comprises an array of memory cells arranged in rows and columns and a word line voltage generating circuit adapted to generate a plurality of read voltages at the same time during a multi-bit read operation. The device further comprises a row selecting circuit adapted to select one of the rows and drive the selected row with a word line voltage, and voltage lines transmitting the respective read voltages to the row selecting circuit as the word line voltage. The read voltages are supplied to the respective voltage lines before starting read periods of the multi-bit read operation.
REFERENCES:
patent: 5856942 (1999-01-01), Lee et al.
patent: 6026014 (2000-02-01), Sato et al.
patent: 6307783 (2001-10-01), Parker
patent: 6473344 (2002-10-01), Kim et al.
patent: 6768676 (2004-07-01), Hirano
patent: 6870785 (2005-03-01), Kang
patent: 2000-222894 (2000-08-01), None
patent: 2003-223791 (2003-08-01), None
patent: 2004319007 (2004-11-01), None
patent: 1020030009281 (2003-01-01), None
patent: 1020050025822 (2005-03-01), None
Lee Doo-Sub
Lim Heung-Soo
Graham Kretelia
Hoang Huan
Samsung Electronics Co,. Ltd.
Volentine & Whitt PLLC
LandOfFree
Flash memory device with improved read speed does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Flash memory device with improved read speed, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Flash memory device with improved read speed will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3903927