Flash memory device with improved programming performance

Details Flash memory device with improved programming performance Flash memory device with improved programming performance

2006-05-02

2006-05-02

Phung, Anh (Department: 2824)

Static information storage and retrieval

Floating gate

Particular connection

C365S185280

Reexamination Certificate

active

07038945

ABSTRACT:
A selected wordline that is coupled to a cell to be programmed is biased during a program operation. The unselected wordlines are biased with a negative potential to reduce the cell leakage at programming bitline potential. A programming pulse is applied to the bitline coupled to the cell to be programmed. During verification, the unselected wordlines are biased back to ground potential.

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