Flash memory device with improved efficiency and reliability and

Details Flash memory device with improved efficiency and reliability and Flash memory device with improved efficiency and reliability and

1997-03-05

1998-06-09

Thomas, Tom

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257309, 257317, H01L 29788

Patent

active

057639132

ABSTRACT:
A memory device and a method of manufacturing the same in accordance with the present invention has an improved writing and erasing efficiency and an improved reliability. The memory device includes a first conductivity type substrate having second conductivity type source and drain regions spaced apart from each other. A source electrode having a T-shaped rail structure is formed in contact with the source region, and a drain electrode having a T-shaped rail structure is formed in contact with the drain region. An I-shaped floating gate is formed on the substrate between the source electrode and the drain electrode with a control gate formed on the floating gate.

REFERENCES:
patent: 4642880 (1987-02-01), Mizutani et al.
patent: 4766088 (1988-08-01), Kono et al.
patent: 5523969 (1996-06-01), Okazawa
patent: 5616941 (1997-04-01), Roth et al.
patent: 5621233 (1997-04-01), Sharma et al.
Verma, G and N. Mielke, "Reliability Performance of ETOX Based Flash Memories," Proc. IRPS, 1988, pp. 158-166.

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