Flash memory device using semiconductor fin and method thereof

Details Flash memory device using semiconductor fin and method thereof Flash memory device using semiconductor fin and method thereof

2007-10-23

2007-10-23

Prenty, Mark V. (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S321000, C257S324000, C257S627000

Reexamination Certificate

active

11216677

ABSTRACT:
A flash memory device according to the present invention includes a semiconductor fin including a top surface and a side surface originated from different crystal planes. The flash memory device comprises: insulating layers having different thicknesses formed on a side surface and a top surface of the semiconductor fin, a storage electrode, a gate insulating layer and a control gate electrode sequentially formed on the insulating layers. A thin insulating layer enables charges to be injected or emitted through it, and a thick insulating layer increases a coupling ratio. Accordingly, it is possible to increase an efficiency of a programming or an erase operation of a flash memory device.

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Ananthan et al., “FinFET SRAM—Device and Circuit Design Considerations,” IEEE Computer Society, 2004 IEEE, 6 pgs.

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