Static information storage and retrieval – Floating gate – Particular biasing
Reexamination Certificate
2009-05-27
2011-11-08
Phung, Anh (Department: 2824)
Static information storage and retrieval
Floating gate
Particular biasing
C365S185220
Reexamination Certificate
active
08054692
ABSTRACT:
A flash memory device controls a common source line voltage and performs a program verify method. A plurality of memory cells is connected between a bit line and the common source line. A data input/output circuit is connected to the bit line and is configured to store data to be programmed in a selected memory cell of the plurality of memory cells. The data input/output circuit maintains data to be programmed within the data input/output circuit during a program verify operation, and decreases noise in the common source line by selectively precharging the bit line based on the data to be programmed.
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Kang Sang-gu
Lee Hee-Won
Lee Ju-Seok
Song Jung-Ho
F. Chau & Associates LLC
Phung Anh
Samsung Electronics Co,. Ltd.
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