Static information storage and retrieval – Floating gate – Multiple values
Reexamination Certificate
2008-10-22
2009-11-24
Yoha, Connie C (Department: 2827)
Static information storage and retrieval
Floating gate
Multiple values
C365S185080, C365S185220, C365S185170, C365S185240
Reexamination Certificate
active
07623377
ABSTRACT:
A flash memory device is provided, and the flash memory device comprises memory cells, a sense node connected to a selected bit line, a load circuit connected to the sense node, and first and second sense and register circuits, each connected to the sense node. The first sense and register circuit is configured to store a first data value in accordance with the voltage level of the sense node during an initial read interval of a multi-bit program operation. The load circuit is configured to selectively pre-charge the sense node in accordance with the data value stored in the first sense and register circuit during a verify read interval of the multi-bit program operation. A multi-bit programming method for the flash memory device is also provided.
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Lee Seung-Jae
Park Jin-Sung
Samsung Electronics Co,. Ltd.
Volentine & Whitt PLLC
Yoha Connie C
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