Flash memory device having resistivity measurement pattern...

Details Flash memory device having resistivity measurement pattern... Flash memory device having resistivity measurement pattern...

2008-07-14

2010-11-09

Picardat, Kevin M (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S314000, C257S315000, C257S316000, C257S317000, C257S318000, C257S320000, C257S321000, C257SE29129, C257SE29300, C257SE21179, C257SE21422, C257SE21680

Reexamination Certificate

active

07829934

ABSTRACT:
A flash memory device has a resistivity measurement pattern and method of forming the same. A trench is formed in an isolation film in a Self-Aligned Floating Gate (SAFG) scheme. The trench is buried to form a resistivity measurement floating gate. This allows the resistivity of the floating gate to be measured even in the SAFG scheme. Contacts for resistivity measurement are directly connected to the resistivity measurement floating gate. Therefore, variation in resistivity measurement values, which is incurred by the parasitic interface, can be reduced.

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Official action issued by the China State Intellectual Property Office to the Chinese Patent Application No. 200510136227.X filed Dec. 23, 2005.

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