Flash memory device having poly spacers

Details Flash memory device having poly spacers Flash memory device having poly spacers

2005-06-28

2005-06-28

Dang, Phuc T. (Department: 2818)

Semiconductor device manufacturing: process

Forming bipolar transistor by formation or alteration of...

Having heterojunction

C438S412000, C365S185140

Reexamination Certificate

active

06911370

ABSTRACT:
A non-volatile memory device includes a substrate having a first active region and a second active region. A first floating gate is provided over the first active region and having an edge, the first floating gate being made of a conductive material. A first spacer is connected to the edge of the first floating gate and being made of the same conductive material as that of the first floating gate. A control gate is provided proximate to the floating gate.

REFERENCES:
patent: 5674768 (1997-10-01), Chang et al.
patent: 5943261 (1999-08-01), Lee
patent: 6436767 (2002-08-01), Koishikawa
patent: 6642570 (2003-11-01), Tseng

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