Static information storage and retrieval – Floating gate – Particular biasing
Reexamination Certificate
2006-08-01
2006-08-01
Tran, Michael (Department: 2827)
Static information storage and retrieval
Floating gate
Particular biasing
C365S233500
Reexamination Certificate
active
07085169
ABSTRACT:
A flash memory device is disclosed that includes a control circuit for generating a count-up pulse signal notifying a generation of an address required for a burst read operation. An address generator circuit generates an address in response to the count-up pulse signal, and a discharge circuit discharges global bit lines in response to the count-up pulse signal. According to this control scheme, the global bit lines may be discharged before the local and global bit lines are selected.
REFERENCES:
patent: 5642324 (1997-06-01), Ghosh et al.
patent: 5798976 (1998-08-01), Arimoto
patent: 6046940 (2000-04-01), Takeuchi et al.
patent: 6097638 (2000-08-01), Himeno et al.
patent: 6147910 (2000-11-01), Hsu et al.
patent: 6288953 (2001-09-01), Kwak
patent: 6507900 (2003-01-01), Okajima
patent: 6862247 (2005-03-01), Yamazaki
Kim Myong-Jae
Park Dong-Ho
Marger & Johnson & McCollom, P.C.
Samsung Electronics Co,. Ltd.
Tran Michael
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