Static information storage and retrieval – Floating gate – Particular biasing
Reexamination Certificate
2005-12-14
2008-08-26
Pham, Lý Duy (Department: 2827)
Static information storage and retrieval
Floating gate
Particular biasing
C365S185230, C365S185280
Reexamination Certificate
active
07417896
ABSTRACT:
A flash memory device and related method of operation are provided. The device generally comprises a word line voltage generator circuit configured to generate a word line voltage based on incremental step pulse programming; and a word line voltage controller circuit that controls the word line voltage generator circuit so that either the unit program time or the increment size of the word line voltage is varied according to the number of program data bits among the set of input data bits that the device will store in memory cells.
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Cho Ji-Ho
Kim Myong-Jae
Pham Lý Duy
Samsung Electronics Co,. Ltd.
Volentine & Whitt PLLC
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