Static information storage and retrieval – Floating gate – Particular biasing
Reexamination Certificate
2011-07-05
2011-07-05
Ho, Hoai V (Department: 2827)
Static information storage and retrieval
Floating gate
Particular biasing
C365S189160, C365S189070, C365S189090, C365S189110, C365S230060, C365S191000
Reexamination Certificate
active
07974128
ABSTRACT:
A flash memory device including a high voltage generator circuit that is adapted to supply a program voltage having a target voltage to a selected word line is provided. The flash memory device is adapted to terminate the program interval in accordance with when the program voltage has been restored to the target voltage after dropping below the target voltage. A method for operating the flash memory device is also provided.
REFERENCES:
patent: 5890191 (1999-03-01), Espinor et al.
patent: 6147906 (2000-11-01), Bill et al.
patent: 6256229 (2001-07-01), Roohparvar
patent: 6392928 (2002-05-01), Roohparvar
patent: 6542411 (2003-04-01), Tanikawa et al.
patent: 6680868 (2004-01-01), Akamatsu
patent: 6930925 (2005-08-01), Guo et al.
patent: 10241388 (1998-09-01), None
patent: 2002230985 (2001-08-01), None
patent: 2002025287 (2002-01-01), None
patent: 2002133878 (2002-05-01), None
patent: 1020020031315 (2002-05-01), None
patent: 10200300093120 (2003-12-01), None
Hwang Sang-Won
Lee Jin-Wook
Park Min-Gun
Graham Kretelia
Ho Hoai V
Samsung Electronics Co,. Ltd.
Volentine & Whitt PLLC
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