Static information storage and retrieval – Floating gate – Particular biasing
Reexamination Certificate
2008-04-29
2008-04-29
Nguyen, Viet Q. (Department: 2827)
Static information storage and retrieval
Floating gate
Particular biasing
C365S185170, C365S185190, C365S185290, C365S185240, C365S218000
Reexamination Certificate
active
07366020
ABSTRACT:
We describe a NAND flash memory device including a memory cell array formed on a substrate including a plurality of cell strings each including a string selecting transistor, a ground selecting transistor, and plural memory cells serially coupled between the string selecting transistor and the ground selecting transistor. A high voltage generator is configured to supply a bulk voltage to the substrate and an erase control circuit is configured to stepwise increase the bulk voltage during a first period of an erase operation and to maintain the bulk voltage substantially constant during a second period of the erase operation.
REFERENCES:
patent: 5132935 (1992-07-01), Ashmore, Jr.
patent: 5220533 (1993-06-01), Turner
patent: 5287317 (1994-02-01), Kobayashi et al.
patent: 5513193 (1996-04-01), Hashimoto
patent: 5732022 (1998-03-01), Kato et al.
patent: 5745417 (1998-04-01), Kobayashi et al.
patent: 5768193 (1998-06-01), Lee et al.
patent: 5781477 (1998-07-01), Rinerson et al.
patent: 5801993 (1998-09-01), Choi
patent: 5805501 (1998-09-01), Shiau et al.
patent: 5825062 (1998-10-01), Muramoto
patent: 5870334 (1999-02-01), Hemink et al.
patent: 5877980 (1999-03-01), Mang et al.
patent: 5903495 (1999-05-01), Takeuchi et al.
patent: 5914896 (1999-06-01), Lee et al.
patent: 5917755 (1999-06-01), Rinerson et al.
patent: 5917757 (1999-06-01), Lee et al.
patent: 5930174 (1999-07-01), Chen et al.
patent: 5953255 (1999-09-01), Lee
patent: 5963479 (1999-10-01), Park et al.
patent: 5963480 (1999-10-01), Harari
patent: 5978277 (1999-11-01), Hsu et al.
patent: 6046935 (2000-04-01), Takeuchi et al.
patent: 6064596 (2000-05-01), Choi et al.
patent: 6163485 (2000-12-01), Kawahara et al.
patent: 6188609 (2001-02-01), Sunkavalli et al.
patent: 6222772 (2001-04-01), Choi et al.
patent: 6285597 (2001-09-01), Kawahara et al.
patent: 6307807 (2001-10-01), Sakui et al.
patent: 6314026 (2001-11-01), Satoh et al.
patent: 6314027 (2001-11-01), Choi
patent: 6314207 (2001-11-01), Persiantsev et al.
patent: 6330192 (2001-12-01), Ohba et al.
patent: 6370081 (2002-04-01), Sakui et al.
patent: 6407944 (2002-06-01), Choi et al.
patent: 6442075 (2002-08-01), Hirano
patent: 6459621 (2002-10-01), Kawahara et al.
patent: 6483747 (2002-11-01), Choi et al.
patent: 6490204 (2002-12-01), Bloom et al.
patent: 6496418 (2002-12-01), Kawahara et al.
patent: 6501765 (2002-12-01), Lu et al.
patent: 6504765 (2003-01-01), Joo
patent: 6512262 (2003-01-01), Watanabe
patent: 6515908 (2003-02-01), Miyawaki et al.
patent: 6529413 (2003-03-01), Lee et al.
patent: 6577540 (2003-06-01), Choi
patent: 6643188 (2003-11-01), Tanaka et al.
patent: 6795347 (2004-09-01), Ausserlechner et al.
patent: 6914827 (2005-07-01), Choi
patent: 7190624 (2007-03-01), Choi
patent: 2002/0060929 (2002-05-01), Choi
patent: 10-55691 (1998-02-01), None
Atsumi, Shigero, et al., “A 3.3V-only 16Mb Flash Memory with Row-Decoding Scheme,” 1996 IEEE International Solid-State Circuits Conference, vol. 2, pp. 42-43.
Marger & Johnson & McCollom, P.C.
Nguyen Viet Q.
Samsung Electronics Co,. Ltd.
LandOfFree
Flash memory device capable of preventing an overerase of... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Flash memory device capable of preventing an overerase of..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Flash memory device capable of preventing an overerase of... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2772531