Static information storage and retrieval – Floating gate – Particular biasing
Reexamination Certificate
2006-11-15
2009-06-09
Yoha, Connie C (Department: 2827)
Static information storage and retrieval
Floating gate
Particular biasing
C365S185170, C365S185180, C365S185190
Reexamination Certificate
active
07545680
ABSTRACT:
In one aspect, a word line enable method in a flash memory device includes driving a signal line corresponding to a selected word line with a word line voltage, and stepwise increasing a gate voltage of a switch transistor connected between the selected word line and the signal line during a program execute period.
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Kim Jin-Kook
Lee Jin-Yub
Samsung Electronics Co,. Ltd.
Volentine & Whitt PLLC
Yoha Connie C
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