Flash memory device and word line enable method thereof

Static information storage and retrieval – Floating gate – Particular biasing

Reexamination Certificate

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Details

C365S185170, C365S185180, C365S185190

Reexamination Certificate

active

07545680

ABSTRACT:
In one aspect, a word line enable method in a flash memory device includes driving a signal line corresponding to a selected word line with a word line voltage, and stepwise increasing a gate voltage of a switch transistor connected between the selected word line and the signal line during a program execute period.

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