Flash memory device and verify method thereof

Details Flash memory device and verify method thereof Flash memory device and verify method thereof

1999-10-29

2000-11-21

Nelms, David

Static information storage and retrieval

Floating gate

Particular biasing

36518911, 365196, G11C 1606

Patent

active

061512508

ABSTRACT:
A word line voltage supply circuit for a nonvolatile semiconductor memory device reduces power supply noise by deactivating a high voltage generator during a verify sensing operation. The word line voltage supply circuit includes a high voltage generator that produces a high voltage signal in response to a control signal from a controller. A voltage regulator regulates the high voltage signal to generate a verify voltage signal that is applied to a selected memory cell. The controller deactivates the control signal during a verify sensing operation so as to eliminate power supply noise caused by the pumping operation of the high voltage generator.

REFERENCES:
patent: 4829482 (1989-05-01), Owen
patent: 5351217 (1994-09-01), Jeon
patent: 5355347 (1994-10-01), Cioaca
patent: 5768190 (1998-06-01), Tanaka et al.

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