Static information storage and retrieval – Floating gate – Particular connection
Reexamination Certificate
2008-09-11
2010-10-19
Lam, David (Department: 2827)
Static information storage and retrieval
Floating gate
Particular connection
C365S185180, C365S230030, C365S189090
Reexamination Certificate
active
07817471
ABSTRACT:
Provided are a flash memory device and method of controlling certain program operation voltages. The flash memory device includes a high voltage generation circuit providing a high voltage to a block selection circuit and a program voltage to a row decoder. The high voltage generation circuit includes a charge pump, a high voltage control circuit controlling the charge pump to provide the high voltage, and a program voltage control circuit providing the program voltage in relation to the high voltage, wherein the high voltage control circuit and the program voltage control circuit operate in response to the same control code.
REFERENCES:
patent: 6438033 (2002-08-01), Roohparvar
patent: 7512010 (2009-03-01), Cho et al.
patent: 2003223791 (2003-08-01), None
patent: 100648295 (2006-11-01), None
patent: 1020070039767 (2007-04-01), None
patent: 1020070054008 (2007-05-01), None
Choi Yoon-Hee
Lee You-Sang
Lam David
Samsung Electronics Co,. Ltd.
Volentine & Whitt PLLC
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