Flash memory device and program recovery method thereof

Static information storage and retrieval – Floating gate – Multiple values

Reexamination Certificate

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C365S185170, C365S185190

Reexamination Certificate

active

08085589

ABSTRACT:
A method of programming a flash memory includes programming memory cells connected to a selected word line by applying a first voltage to the selected word line and a second voltage to non-selected word lines, the second voltage being lower than the first voltage, lowering the first voltage of the selected word line to a third voltage after programming the memory cells connected to the selected word line, the third voltage being lower than the first voltage, and recovering a fourth voltage of the selected word line and the non-selected word lines, the fourth voltage being lower than the second and third voltages.

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patent: 7180787 (2007-02-01), Hosono et al.
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patent: 7804712 (2010-09-01), Kim et al.
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patent: 2007/0171719 (2007-07-01), Hemink et al.
patent: 07-320487 (1995-12-01), None
patent: 10-2006-0044855 (2006-05-01), None
patent: 10-2007-0029583 (2007-03-01), None

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