Static information storage and retrieval – Floating gate – Multiple values
Reexamination Certificate
2010-09-14
2011-12-27
Elms, Richard (Department: 2824)
Static information storage and retrieval
Floating gate
Multiple values
C365S185170, C365S185190
Reexamination Certificate
active
08085589
ABSTRACT:
A method of programming a flash memory includes programming memory cells connected to a selected word line by applying a first voltage to the selected word line and a second voltage to non-selected word lines, the second voltage being lower than the first voltage, lowering the first voltage of the selected word line to a third voltage after programming the memory cells connected to the selected word line, the third voltage being lower than the first voltage, and recovering a fourth voltage of the selected word line and the non-selected word lines, the fourth voltage being lower than the second and third voltages.
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Kim Moo-Sung
Lim Young-Ho
Elms Richard
Muir Patent Consulting, PLLC
Nguyen Hien
Samsung Electronics Co,. Ltd.
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