Static information storage and retrieval – Floating gate – Particular connection
Reexamination Certificate
2010-11-04
2011-10-25
Auduong, Gene N (Department: 2827)
Static information storage and retrieval
Floating gate
Particular connection
C365S185180, C365S185230, C365S189090
Reexamination Certificate
active
08045380
ABSTRACT:
A flash memory and a program method of the flash memory include applying a pass voltage to word lines to boost a channel voltage, which is discharged to a ground voltage. A program voltage is applied to a selected word line and a local voltage is applied to at least one word line supplied with the pass voltage while the program voltage is being applied to the selected word line. The local voltage is lower than the pass voltage and equal to or higher than the ground voltage. The boosted channel voltage may be discharged before the program voltage is applied to the selected word line.
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Byeon Dae-Seok
Lim Young-Ho
Auduong Gene N
Samsung Electronics Co,. Ltd.
Volentine & Whitt PLLC
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