Flash memory device and program method of flash memory...

Details Flash memory device and program method of flash memory... Flash memory device and program method of flash memory...

2007-07-30

2010-12-14

Auduong, Gene N. (Department: 2827)

Static information storage and retrieval

Floating gate

Particular biasing

C365S185180, C365S189090

Reexamination Certificate

active

07852682

ABSTRACT:
A flash memory and a program method of the flash memory include applying a pass voltage to word lines to boost a channel voltage, which is discharged to a ground voltage. A program voltage is applied to a selected word line and a local voltage is applied to at least one word line supplied with the pass voltage while the program voltage is being applied to the selected word line. The local voltage is lower than the pass voltage and equal to or higher than the ground voltage. The boosted channel voltage may be discharged before the program voltage is applied to the selected word line.

REFERENCES:
patent: 5621684 (1997-04-01), Jung
patent: 5677873 (1997-10-01), Choi et al.
patent: 5715194 (1998-02-01), Hu
patent: 5991202 (1999-11-01), Derhacobian et al.
patent: 6061270 (2000-05-01), Choi
patent: 6259624 (2001-07-01), Nobukata
patent: 6614688 (2003-09-01), Jeong et al.
patent: 6987694 (2006-01-01), Lee
patent: 7170793 (2007-01-01), Guterman
patent: 7486557 (2009-02-01), Kim et al.
patent: 7617335 (2009-11-01), Choi
patent: 7636265 (2009-12-01), Park et al.
patent: 08-279297 (1996-10-01), None
patent: 2000-048581 (2000-02-01), None
patent: 2002-245785 (2002-08-01), None
patent: 2004-014052 (2004-01-01), None
patent: 10-1997-0051324 (1997-07-01), None
patent: 100145475 (1998-04-01), None
patent: 10-2002-0047770 (2002-06-01), None
patent: 1020020054511 (2002-07-01), None
patent: 10-2004-0090841 (2004-10-01), None
patent: 10-0621634 (2006-08-01), None
patent: 10-2006-0114736 (2006-11-01), None

Affiliated with

Also associated with

Rating

Flash memory device and program method of flash memory... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Flash memory device and program method of flash memory..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Flash memory device and program method of flash memory... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4173379