Static information storage and retrieval – Floating gate – Particular biasing
Reexamination Certificate
2006-12-01
2009-06-23
Ho, Hoai V (Department: 2827)
Static information storage and retrieval
Floating gate
Particular biasing
C365S185170, C365S185210
Reexamination Certificate
active
07551490
ABSTRACT:
A method of reading data from a flash memory device that includes a multiple block memory cell array, each block having a cell string connected to a bit line and comprising a string select transistor connected to a string select line, a memory cell connected to a wordline and a global select transistor connected to a global select line and having a source connected to a common source line. The method includes pre-charging the bit lines to a first voltage in a standby state, discharging a selected bit line connected to a selected memory cell to a second voltage in response to a read command, and reading data stored in the selected memory cell in response to the read command.
REFERENCES:
patent: 6674668 (2004-01-01), Ikehashi et al.
patent: 7154804 (2006-12-01), Takazawa et al.
patent: 11-086574 (1999-03-01), None
patent: 1020020050367 (2002-06-01), None
patent: 1020050002245 (2005-01-01), None
Ho Hoai V
Samsung Electronics Co,. Ltd.
Volentine & Whitt PLLC
LandOfFree
Flash memory device and method of reading data from flash... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Flash memory device and method of reading data from flash..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Flash memory device and method of reading data from flash... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4143104