Flash memory device and method of reading data from flash...

Static information storage and retrieval – Floating gate – Particular biasing

Reexamination Certificate

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C365S185170, C365S185210

Reexamination Certificate

active

07551490

ABSTRACT:
A method of reading data from a flash memory device that includes a multiple block memory cell array, each block having a cell string connected to a bit line and comprising a string select transistor connected to a string select line, a memory cell connected to a wordline and a global select transistor connected to a global select line and having a source connected to a common source line. The method includes pre-charging the bit lines to a first voltage in a standby state, discharging a selected bit line connected to a selected memory cell to a second voltage in response to a read command, and reading data stored in the selected memory cell in response to the read command.

REFERENCES:
patent: 6674668 (2004-01-01), Ikehashi et al.
patent: 7154804 (2006-12-01), Takazawa et al.
patent: 11-086574 (1999-03-01), None
patent: 1020020050367 (2002-06-01), None
patent: 1020050002245 (2005-01-01), None

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