Static information storage and retrieval – Floating gate – Particular biasing
Reexamination Certificate
2008-05-23
2010-06-29
Pham, Ly D (Department: 2827)
Static information storage and retrieval
Floating gate
Particular biasing
C365S185220
Reexamination Certificate
active
07746703
ABSTRACT:
A flash memory device and a method of programming the same include a memory cell array, a pass/fail check circuit and a control logic circuit. The memory cell array includes multiple memory cells arranged in rows and columns. The pass/fail check circuit verifies whether data bits selected by a column address during a column scan operation have program data values. The control logic circuit detects fail data bits from the selected data bits and stores the column address in response to the verification result of the pass/fail check circuit. The control logic circuit also compares a number of the fail data bits with a reference value and controls generation of the column address according to the comparison result.
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Choi Yun-Ho
Kim Kyong-Ae
Lee Jin-Wook
Pham Ly D
Samsung Electronics Co,. Ltd.
Volentine & Whitt P.L.L.C.
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