Flash memory device and method of manufacturing the same

Details Flash memory device and method of manufacturing the same Flash memory device and method of manufacturing the same

2008-11-29

2010-12-14

Mandala, Victor A (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S314000, C257S324000, C257SE29300, C257SE29309, C438S287000

Reexamination Certificate

active

07851845

ABSTRACT:
Embodiments relate to a flash memory device and a method of manufacturing the same that may include a tunnel oxide layer on and/or over a semiconductor substrate having source and drain regions. The tunnel oxide layer may have a first width. The flash memory device may include a first polysilicon pattern and a second polysilicon pattern on and/or over the tunnel oxide layer and a dielectric pattern on and/or over the tunnel oxide layer, where the first and second polysilicon patterns may be provided. It may also include a third polysilicon pattern on and/or over the dielectric pattern, the third polysilicon pattern having a second width, and a spacer formed on and/or over sidewalls of the first, second and third polysilicon patterns, the dielectric pattern and the tunnel oxide pattern. According to embodiments, the second width may be greater than the first width.

REFERENCES:
patent: 5281548 (1994-01-01), Prall
patent: 7060560 (2006-06-01), Wu et al.
patent: 2002/0040992 (2002-04-01), Manabe et al.
patent: 2005/0064666 (2005-03-01), Kim
patent: 2005/0162884 (2005-07-01), Jung
patent: 2006/0220095 (2006-10-01), Kim

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