Flash memory device and method of manufacturing the same

Details Flash memory device and method of manufacturing the same Flash memory device and method of manufacturing the same

2007-05-19

2009-10-27

Booth, Richard A. (Department: 2812)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C438S261000, C257SE27078

Reexamination Certificate

active

07608885

ABSTRACT:
A non-volatile memory device has a gate dielectric film formed between a floating gate and a control gate. The gate dielectric film is formed by forming an oxide film and a ZrO2/Al2O3/ZrO2(ZAZ) film. Accordingly, the reliability of non-volatile memory devices can be improved while securing a high coupling ratio.

REFERENCES:
patent: 2003/0030099 (2003-02-01), Hsieh et al.
patent: 2003/0194853 (2003-10-01), Jeon
patent: 2005/0275012 (2005-12-01), Nara et al.
patent: 2006/0094191 (2006-05-01), Choi et al.
patent: 2007/0026608 (2007-02-01), Choi et al.
patent: 10-2005-0070860 (2005-07-01), None

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