Flash memory device and method of fabricating the same

Details Flash memory device and method of fabricating the same Flash memory device and method of fabricating the same

2008-06-26

2010-12-21

Smith, Matthew S (Department: 2823)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S315000, C257SE29300, C257SE21546, C438S424000, C438S692000, C438S700000

Reexamination Certificate

active

07855409

ABSTRACT:
The present invention relates to flash memory devices and a method of fabricating the same. In an aspect of the present invention, the flash memory device includes trenches formed in a semiconductor substrate and having a step at their lower portion, a tunnel insulating layer formed in an active region of the semiconductor substrate, first conductive layers formed on the tunnel insulating layer, an isolation layer gap-filling between the trenches and the first conductive layers, and a second conductive layer formed on the first conductive layer and having one side partially overlapping with the isolation layers.

REFERENCES:
patent: 7179717 (2007-02-01), Sandhu et al.
patent: 2003/0001204 (2003-01-01), Kobayashi
patent: 2006/0270181 (2006-11-01), Sandhu et al.
patent: 1591837 (2005-03-01), None
patent: 10-2000-0045372 (2000-07-01), None
patent: 10-2006-0005062 (2006-01-01), None
patent: 10-2007-0055716 (2007-05-01), None
patent: 10-2007-0064835 (2007-06-01), None
Translation of the First Office Action for corresponding Chinese Patent Application No. 200810132034.0, dated Jan. 22, 2010.

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