Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – Insulated gate formation
Reexamination Certificate
2011-07-12
2011-07-12
Garber, Charles D (Department: 2812)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
Insulated gate formation
C438S584000, C438S585000, C438S586000, C438S588000, C438S760000, C438S780000, C257S314000, C257S315000, C257S316000, C257S317000, C257S318000, C257S319000, C257S320000, C257S321000, C257S322000, C257S323000, C257S324000, C257SE27078, C257SE29300, C257SE29309, C257SE21179, C257SE21182, C257SE21209, C257SE21210, C257SE21422, C257SE21423, C257SE21679, C257SE21694
Reexamination Certificate
active
07977226
ABSTRACT:
A flash memory device and a method for fabricating the same are disclosed. The flash memory device includes an ONO layer on a substrate, polysilicon gates on the ONO layer, a gate oxide layer on the substrate, the ONO layer and the polysilicon gates, and a low temperature oxide layer and polysilicon sidewall spacers on outer side surfaces of the polysilicon gates, except in a region between nearest adjacent polysilicon gates.
REFERENCES:
patent: 2006/0239083 (2006-10-01), Lee
Abdelaziez Yasser A
Dongbu Hi-Tek Co., Ltd.
Fortney Andrew D.
Garber Charles D
Mahan Theresa J.
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