Static information storage and retrieval – Floating gate – Particular biasing
Reexamination Certificate
2008-04-25
2010-11-16
Nguyen, Tuan T (Department: 2824)
Static information storage and retrieval
Floating gate
Particular biasing
C365S185330, C365S185230, C365S185170
Reexamination Certificate
active
07835193
ABSTRACT:
A flash memory device includes a cell array and a voltage supplying and selecting portion. The cell array includes multiple word lines, and the voltage supplying and selecting portion is configured to generate at least two different voltages to be supplied to the word lines of the cell array during an erase operation.
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Le Toan
Nguyen Tuan T
Samsung Electronics Co,. Ltd.
Volentine & Whitt P.L.L.C.
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