Static information storage and retrieval – Floating gate – Particular biasing
Reexamination Certificate
2007-08-30
2009-10-13
Dinh, Son (Department: 2824)
Static information storage and retrieval
Floating gate
Particular biasing
C365S185240
Reexamination Certificate
active
07602650
ABSTRACT:
In one aspect, a program method is provided for a flash memory device including a plurality of memory cells each being programmed in one of a plurality of data states. The program method of this aspect includes programming selected memory cells in a first data state, verifying a result of the programming, successively programming selected memory cells in at least two or more data states corresponding to threshold voltages which are lower than a threshold voltage corresponding to the first data state, and verifying results of the successive programming.
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Jeong Jae-Yong
Jung Kee-Ho
Yoon Chi-Weon
Dinh Son
Samsung Electronics Co,. Ltd.
Volentine & Whitt PLLC
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