Flash memory device and method for programming multi-level...

Details Flash memory device and method for programming multi-level... Flash memory device and method for programming multi-level...

2007-08-30

2009-10-13

Dinh, Son (Department: 2824)

Static information storage and retrieval

Floating gate

Particular biasing

C365S185240

Reexamination Certificate

active

07602650

ABSTRACT:
In one aspect, a program method is provided for a flash memory device including a plurality of memory cells each being programmed in one of a plurality of data states. The program method of this aspect includes programming selected memory cells in a first data state, verifying a result of the programming, successively programming selected memory cells in at least two or more data states corresponding to threshold voltages which are lower than a threshold voltage corresponding to the first data state, and verifying results of the successive programming.

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