Flash memory device and method for manufacturing the same

Details Flash memory device and method for manufacturing the same Flash memory device and method for manufacturing the same

2011-05-24

2011-05-24

Booth, Richard A. (Department: 2812)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

Reexamination Certificate

active

07948022

ABSTRACT:
A flash memory device, and a manufacturing method thereof, having advantages of protecting sidewalls of a floating gate and a control gate and preventing a recess of an active area of a source region are provided. The method includes forming a tunneling oxide layer on an active region of a semiconductor substrate, forming a floating gate, a gate insulation layer, and a control gate on the tunneling oxide layer, forming insulation sidewall spacers on sides of the floating gate and the control gate, and removing at least portions of the tunneling oxide layer and the device isolation layer so as to expose the active region.

REFERENCES:
patent: 5736442 (1998-04-01), Mori
patent: 6146946 (2000-11-01), Wang et al.
Office Action dated Sep. 19, 2008; “Flash Memory Device and Method for Manufacturing the Same”; Chinese Patent Application No. 200610090551.7; The State Intellectual Property Office of P.R.C., People's Republic of China.

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