Flash memory device and method for manufacturing the same

Details Flash memory device and method for manufacturing the same Flash memory device and method for manufacturing the same

1997-08-07

1999-11-16

Martin-Wallace, Valencia

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257316, 257322, 257321, H01L 29788

Patent

active

059863030

ABSTRACT:
A flash memory device has improved erasable characteristics and device reliability. The flash memory device includes a semiconductor substrate and heavily doped impurity regions formed spaced apart from one another by a predetermined distance in the semiconductor substrate in a first direction. First and second isolation regions are formed spaced apart from each other by a second predetermined distance on the semiconductor substrate, in a second direction which is preferably at a right angle to the first direction. Each of the floating gates are formed between the first and second isolation regons and between the heavily doped impurity regions. The control gate lines are formed between the first and second isolation regions, and over the floating gates in the same direction as the first and second isolation regions. An erase gate line is formed to have a narrower width than the floating gate, and is formed over the floating gate, preferably at a right angle to the control gate line.

REFERENCES:
patent: 4546538 (1985-10-01), Suzuki
patent: 5036378 (1991-07-01), Lu et al.
patent: 5070032 (1991-12-01), Yuan et al.
patent: 5364805 (1994-11-01), Taura et al.
patent: 5712179 (1998-01-01), Yuan

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