Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2011-07-19
2011-07-19
Mandala, Victor (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257SE21409, C257SE29255
Reexamination Certificate
active
07982258
ABSTRACT:
A flash memory device and a method for manufacturing the device includes forming a device isolation layer in a semiconductor substrate defining active regions, forming a control gate layer over the entire upper surface of the semiconductor substrate, forming a gate mask over the control gate layer, the gate mask being used to provide gate lines on the device isolation layer with grooves at positions opposite each other, and forming the grooves by etching the control gate layer using the gate mask as an etching mask, and forming the gate lines on the device isolation layer. A common source line can be more easily defined during a SAS process including photography and etching processes, and a reduced source resistance can be accomplished, resulting in an improvement in characteristics of the flash memory device.
REFERENCES:
patent: 7358560 (2008-04-01), Lee
patent: 2001/0032996 (2001-10-01), Inoue
patent: 2007/0010056 (2007-01-01), Kim
Dongbu Hi-Tek Co., Ltd.
Mandala Victor
Moore Whitney
Sherr & Vaughn, PLLC
LandOfFree
Flash memory device and method for manufacturing the device does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Flash memory device and method for manufacturing the device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Flash memory device and method for manufacturing the device will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2634494