Flash memory device and method for fabricating the same

Details Flash memory device and method for fabricating the same Flash memory device and method for fabricating the same

2008-04-08

2008-04-08

Booth, Richard A. (Department: 2812)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257SE27078

Reexamination Certificate

active

11320862

ABSTRACT:
A flash memory device including an isolation layer for defining active regions in a semiconductor substrate. The active region is a region in which flash memory cells are to be formed. The device also includes a gate stack is formed to come across the active region and the isolation layer, and a sidewall spacer is formed at sidewalls of the gate stack. The device further includes a common source line that electrically interconnects a plurality of sources of a plurality of the flash memory cells, and is formed in the isolation layer by removing an insulating material in the isolation layer and is formed in parallel to a word line formed over the gate stack. A silicide layer is formed in the common source line.

REFERENCES:
patent: 4852062 (1989-07-01), Baker et al.
patent: 5736442 (1998-04-01), Mori
patent: 5741719 (1998-04-01), Kim
patent: 6207504 (2001-03-01), Hsieh et al.
patent: 6673674 (2004-01-01), Inoue et al.

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