Flash memory device and method for fabricating the same

Details Flash memory device and method for fabricating the same Flash memory device and method for fabricating the same

2007-04-03

2007-04-03

Booth, Richard A. (Department: 2812)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

Insulated gate formation

C257SE21179, C438S265000

Reexamination Certificate

active

11320741

ABSTRACT:
A flash memory device includes a floating gate formed with a byproduct, such as a polymer, generated in an etching process. The flash memory device is configured to minimize the unstableness often caused by a floating gate that includes direct contact between polymer and polysilicon. Formation of the floating gate includes forming a tunneling oxide layer, a conductive layer and an insulating layer on a semiconductor substrate. Portions of the insulating layer are removed using a photoresist pattern defining a floating gate area as a mask. Thermal oxide layers are formed on a surface of the conductive layer from which the insulating layer was removed. Polymer materials are included on sides of the respective photoresist pattern and insulating layer. A floating gate is formed by selectively removing portions of the thermal oxide layer and the conductive layer using the photoresist and the polymer materials as a mask.

REFERENCES:
patent: 6770520 (2004-08-01), Chuang et al.
patent: 6881629 (2005-04-01), Hsieh et al.
patent: 6995080 (2006-02-01), Scott
patent: 2001/0015454 (2001-08-01), Lee et al.
patent: 2006/0110882 (2006-05-01), Liu et al.

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