Static information storage and retrieval – Floating gate – Multiple values
Reexamination Certificate
2008-06-26
2011-10-18
Nguyen, Van Thu (Department: 2824)
Static information storage and retrieval
Floating gate
Multiple values
C365S210110
Reexamination Certificate
active
08040725
ABSTRACT:
A flash memory device includes a cell array and a read voltage adjuster. The cell array includes a first field having first memory cells and a second field having second memory cells. The read voltage adjuster determines a read voltage for reading first data from the first memory cells of the first field with reference to second data read from the memory cells of the second field.
REFERENCES:
patent: 6839280 (2005-01-01), Chindalore et al.
patent: 2005/0162913 (2005-07-01), Chen
patent: 2007/0002632 (2007-01-01), Okayama et al.
patent: 2007/0234183 (2007-10-01), Hwang et al.
patent: 2007/0291556 (2007-12-01), Kamei
patent: 2008/0175055 (2008-07-01), Kim
patent: 2002-184191 (2002-06-01), None
patent: 2006-114078 (2006-04-01), None
patent: 1020010061457 (2001-07-01), None
King Douglas
Nguyen Van Thu
Samsung Electronics Co,. Ltd.
Volentine & Whitt PLLC
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