Error detection/correction and fault detection/recovery – Pulse or data error handling – Digital data error correction
Reexamination Certificate
2011-06-07
2011-06-07
Baderman, Scott T (Department: 2112)
Error detection/correction and fault detection/recovery
Pulse or data error handling
Digital data error correction
Reexamination Certificate
active
07958430
ABSTRACT:
An improved flash memory device and method for improving the performance and reliability of a flash memory device is provided. According to one embodiment, a method for writing data to a memory device may include writing the data to a temporary storage location within the memory device before the data is copied to another location within the memory device, incrementing a count value to indicate that the data has been copied, and repeating the step of writing, if the count value is less than a threshold value. If the count value is greater than or equal to the threshold value, the method may write the data to an external memory controller, where the data is checked for errors and corrected if an error is found, before the data is copied to the other location within the memory device.
REFERENCES:
patent: 5436914 (1995-07-01), Augustine et al.
patent: 5822618 (1998-10-01), Ecclesine
patent: 5882618 (1999-03-01), Bhatia et al.
patent: 5996041 (1999-11-01), Kim
patent: 6055578 (2000-04-01), Williams et al.
patent: 6185134 (2001-02-01), Tanaka
patent: 6381176 (2002-04-01), Kim et al.
patent: 6643188 (2003-11-01), Tanaka et al.
patent: 6813184 (2004-11-01), Lee
patent: 7328365 (2008-02-01), Karpuszka et al.
patent: 2005/0246613 (2005-11-01), Blaauw et al.
patent: 2005/0283566 (2005-12-01), Callaghan
patent: 2007/0300038 (2007-12-01), Ware
patent: 2008/0313368 (2008-12-01), Kuo et al.
Kolokowsky Steve H.
McCoy Mark D.
Ahmed Enam
Baderman Scott T
Cypress Semiconductor Corporation
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