Static information storage and retrieval – Floating gate – Multiple values
Reexamination Certificate
2009-10-13
2011-12-20
Phan, Trong (Department: 2827)
Static information storage and retrieval
Floating gate
Multiple values
C365S185170, C365S185180, C365S185220, C365S185240, C365S185330
Reexamination Certificate
active
08081508
ABSTRACT:
Provided is a flash memory device. The flash memory device includes a memory cell array, and a voltage generator. The memory cell array is connected to a plurality of word lines. The voltage generator generates a program voltage which is supplied to a selected word line of the word lines and a pass voltage which is supplied to a non-selected word line of the word lines, in a program operation. The voltage generator varies a level of the pass voltage with a temperature.
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Kim Moo-sung
Lee Sung-soo
Myers Bigel Sibley & Sajovec P.A.
Phan Trong
Samsung Electronics Co,. Ltd.
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