Static information storage and retrieval – Floating gate – Particular biasing
Reexamination Certificate
2006-12-29
2008-12-02
Pham, Ly D (Department: 2827)
Static information storage and retrieval
Floating gate
Particular biasing
C365S185220, C365S185230, C365S236000, C365S239000
Reexamination Certificate
active
07460412
ABSTRACT:
A method of post-programming a flash memory device includes the steps of: post-programming memory cells of a selected word line in a predetermined unit; determining, after incrementing an address for selecting the next word line, whether the incremented address matches one of reference addresses; and varying the post-programming unit of the selected memory cells whenever the incremented address matches one of reference addresses.
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Choi Jong-In
Lee Doo-Sub
F. Chau & Assoc. LLC
Pham Ly D
Samsung Electronics Co,. Ltd.
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