Static information storage and retrieval – Floating gate – Particular biasing
Patent
1998-05-19
2000-03-28
Nelms, David
Static information storage and retrieval
Floating gate
Particular biasing
36518511, 36518526, C11C 1604
Patent
active
060440171
ABSTRACT:
A flash memory includes an array of memory cells having sources, drains, floating gates, and control gates. The array includes a conductive plate formed over the memory cells to affect a capacitive coupling between the memory cells and the conductive plate. A first voltage source provides a first voltage to the control gate of a selected one of the memory cells. A second voltage source provides a second voltage to the conductive plate after the control gate of the selected one of the memory cells has been charged up to a predetermined voltage level. Additionally, the flash memory includes a switching circuit to transfer the first and second voltages to the control gate of the selected memory cell and the conductive plate, respectively, responsive to a first and second control signals.
REFERENCES:
patent: 5671176 (1997-09-01), Jang et al.
patent: 5828600 (1998-10-01), Kato et al.
patent: 5877980 (1999-03-01), Mang et al.
Jung Tae-Sung
Lee Dong-Gi
Nelms David
Nguyen Van Thu
Samsung Electronics Co,. Ltd.
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