Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2007-10-09
2007-10-09
Vu, Hung (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S316000
Reexamination Certificate
active
10838215
ABSTRACT:
A non-volatile memory device includes a substrate, an insulating layer, a fin structure, a floating gate, an inter-gate dielectric and a control gate. The insulating layer is formed on the substrate and the fin structure is formed on the insulating layer. The fin structure may include a strained layer formed on a non-strained layer.
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Co-pending U.S. Appl. No. 10/929,538 by Yu et al., filed Aug. 31, 2004, entitled “Non-Volatile Memory Device”, 25 pages.
Wang Haihong
Yu Bin
Harrity & Snyder LLP
Vu Hung
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