Static information storage and retrieval – Read/write circuit – Differential sensing
Reexamination Certificate
2007-12-18
2007-12-18
Le, Vu A. (Department: 2824)
Static information storage and retrieval
Read/write circuit
Differential sensing
C365S185170
Reexamination Certificate
active
11299063
ABSTRACT:
A flash memory device comprises a first group of dummy memory cells disposed between source selection transistors, which are coupled to a source selection line, and memory cells coupled to a first wordline. The flash memory device further comprises a second group of dummy memory cells disposed between drain selection transistors, which are coupled to a drain selection line, and memory cells coupled to the last wordline. The flash memory device is configured to prevent program disturbance in deselected cell strings and degradation of programming/erasing speeds in a selected cell string.
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Lee Kyeong Bock
Park Byung Soo
Park Hee Sik
Hynix Semiconductor Inc
Le Vu A.
Townsend & Townsend & Crew LLP
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