Flash memory device

Details Flash memory device Flash memory device

2005-08-23

2005-08-23

Le, Dung (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S329000

Reexamination Certificate

active

06933558

ABSTRACT:
A memory device includes a conductive structure, a number of dielectric layers and a control gate. The dielectric layers are formed around the conductive structure and the control gate is formed over the dielectric layers. A portion of the conductive structure functions as a drain region for the memory device and at least one of the dielectric layers functions as a charge storage structure for the memory device. The dielectric layers may include oxide-nitride-oxide layers.

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Copy of co-pending U.S. Appl. No. 10/459,576; by Yider Wu et al., filed Jun. 12, 2003 entitled: “Non-Volatile Memory Device,” 20 page specification, 11 sheets of drawings.

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