Flash memory device

Details Flash memory device Flash memory device

2008-04-15

2008-04-15

Quach, T. N. (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S315000, C257S510000, C257SE21422, C257SE29304, C438S257000, C438S264000, C438S430000

Reexamination Certificate

active

07358558

ABSTRACT:
A floating gate of a flash memory device is formed in a moat formed in an isolation film. Therefore, an electric field applied between a control gate and a channel region upon cycling can be precluded or mitigated. A distance between the control gate and the channel region is set greater than a predetermined value. Therefore, an electric field applied between the control gate and the channel region upon cycling can be mitigated. As a result, a data retention characteristic and an endurance characteristic can be improved.

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patent: 2006/0091445 (2006-05-01), Utsuno
patent: 498503 (2002-08-01), None

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