Flash memory device

Details Flash memory device Flash memory device

2011-04-05

2011-04-05

Smith, Matthew S (Department: 2823)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S623000, C438S708000, C438S712000, C438S735000, C438S736000, C438S737000

Reexamination Certificate

active

07919808

ABSTRACT:
Embodiments relate to a flash memory device and a method of manufacturing a flash memory device, which may increase a coupling coefficient between a control gate and a floating gate by increasing a surface area of floating gate. In embodiments, a flash memory device may be formed by forming a photoresist pattern for forming a floating gate on a semiconductor substrate including an oxide film, a floating gate poly film, and a BARC (Bottom AntiReflect Coating), performing a first etching process using the photoresist pattern as a mask, to etch the floating gate poly film to a predetermined depth, depositing and forming a polymer to cover the photoresist pattern, forming spacers of the polymer at both sidewalls of the photoresist pattern, forming a second etching process using the spacers as a mask, to expose the oxide film, and removing the BARC, the photoresist pattern and the spacers by ashing and stripping.

REFERENCES:
patent: 6724036 (2004-04-01), Hsieh et al.
patent: 2003/0022446 (2003-01-01), Lee et al.
patent: 2006/0131635 (2006-06-01), Lai et al.

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