Flash memory cells with reduced distances between cell elements

Details Flash memory cells with reduced distances between cell elements Flash memory cells with reduced distances between cell elements

2007-04-24

2007-04-24

Lindsay, Jr., Walter L. (Department: 2812)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S710000, C438S714000, C438S286000, C257SE21257, C257SE21252, C257SE21256

Reexamination Certificate

active

10881042

ABSTRACT:
An anti-reflective coating (ARC) is formed over the various layers involved in a cell fabrication process. The ARC is selectively etched such that the edges of the etched areas of the ARC slope downward at an angle determined by the thickness of the ARC. The etching process could include CF4chemistry. The inner edges of the sloped ARC areas reduce the original photo-defined space since the underlying layers are now defined by the sloped edges.

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